SED-LDB系列漏电流传感器

SED-LDB Series Leakage Current Sensor

电气特性/Electrical Characteristics
型号Type		额定测量电流IPN(mA)Rated input current		测量范围IPM(mA)Measuring current range
SED-0.01LDB1/LDB2		10		15
SED-0.02LDB1/LDB2		20		30
SED-0.05LDB1/LDB2		50		75
SED-0.1LDB1/LDB2		100		150
VCC	电源电压1）Supply voltage		@DC ±12V～±15V ±5%		V
ICC	电流消耗Current consumption		@IPN ≤15		mA
VOUT	额定输出电压Rated output voltage		@ 25℃ ±5		V
备注/note：1） 工作在±12V≤VC≤±15V会影响产品的测量范围.Operating at ±12V≤VC≤±15V will reduce the measuring range.
动态特性/Dynamic Characteristics
XG	精度Accuracy		@IPN,T=25℃ ≤±1		%
ƐL	线性度3)Linearity		@IPN,T=25℃ ≤±1		%
VOE	零点失调电压VOEZero offset voltage		@IP=0,T=25℃ ≤±20		mV
VOM	磁滞电压Magnetic offset voltage		@IPN→0,T=25℃ ≤±20		mV
TCVOE	偏移电压温漂IOTTemperature variation of VOE		@-40℃~80℃ ≤±2.0		mV/℃
Tr	响应时间Response time		@90%IPN ≤50		ms
BW	工作频宽 -3dBBandwidth		DC～50		KHz
一般特性/General characteristics
TA	工作温度Operating temperature		-40～+85		℃
TS	储存温度Storage temperature		-45～+85		℃
m	产品重量Mass(approx)		≈65		g
隔离特性/ Insulation coordination
Vd	绝缘电压Galvanic isolation		@50HZ, 1min 3.0		KV

备注/note：

2）      线性度测试数据不包含零点失调电压. Linearity data exclude the electrical offset (VOE)

结构图/ Structure diagram

主要尺寸/Main dimensions

使用说明/Directions for use

●按照结构图中的电流箭头标定的方向接入电流，注意电流的正反向。/Please install according to the direction of the arrow in the structure diagram, and pay attention to the positive and reverse direction of current.

●按照结构图中标定的功能管脚定义来接线（注意：错误的接线可能导致传感器损坏）。/Please wire according to the definition of the functional pin illustrated in the structure diagram (Note: the inaccurate way of installation may cause damage to the sensor).

●初级导体的温度不应超过100℃。/Temperature of the primary conductor should not exceed 100°C.

●上述的规格为标准规格，我司可根据客户要求定制产品。/This is a standard mode. We can provide the products according to your specifications.